2SK2386 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2386
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK2386

2SK2386 Datasheet (PDF)

..1. Size:58K inchange semiconductor
2sk2386.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

8.1. Size:393K toshiba
2sk2381.pdf

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.

8.2. Size:288K toshiba
2sk2385.pdf

8.3. Size:411K toshiba
2sk2382.pdf

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

8.4. Size:32K panasonic
2sk2383.pdf

Power F-MOS FETs 2SK23832SK2383Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

8.5. Size:29K panasonic
2sk2380.pdf

Silicon Junction FETs (Small Signal) 2SK23802SK2380Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency1.6 0.15For infrared sensor0.4 0.8 0.1 0.4 Features1 Low gate-source leakage current, IGSS3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by2taping/magazine packing are available.

8.6. Size:54K inchange semiconductor
2sk2388.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)

8.7. Size:58K inchange semiconductor
2sk2389.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 700V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage 30 V

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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