2SK2386 Specs and Replacement
Type Designator: 2SK2386
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO220AB
2SK2386 substitution
- MOSFET ⓘ Cross-Reference Search
2SK2386 datasheet
2sk2386.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V ... See More ⇒
2sk2381.pdf
2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.... See More ⇒
2sk2382.pdf
2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.13 (typ.) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5... See More ⇒
Detailed specifications: 2SK2361, 2SK2362, 2SK2365, 2SK2365-Z, 2SK2366, 2SK2366-Z, 2SK2371, 2SK2372, IRFZ44N, 2SK2388, 2SK2389, 2SK2402, 2SK3268, 2SK3269, 2SK3272-01SJ, 2SK3277, 2SK3288ENTL
Keywords - 2SK2386 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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