All MOSFET. 2SK2386 Datasheet

 

2SK2386 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2386

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO220AB

2SK2386 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2386 Datasheet (PDF)

1.1. 2sk2386.pdf Size:58K _update

2SK2386
2SK2386

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V

4.1. 2sk2389.pdf Size:58K _update

2SK2386
2SK2386

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage ±30 V

4.2. 2sk2388.pdf Size:54K _update

2SK2386
2SK2386

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)

4.3. 2sk2381.pdf Size:393K _toshiba

2SK2386
2SK2386

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.56 ? (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V

4.4. 2sk2382.pdf Size:411K _toshiba

2SK2386
2SK2386

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 ? (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V =

4.5. 2sk2383.pdf Size:32K _panasonic

2SK2386
2SK2386

Power F-MOS FETs 2SK2383 2SK2383 Silicon N-Channel Power F-MOS Unit : mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 o3.2 0.1 High-speed switching 5? 5? Low ON-resistance No secondary breakdown 5? 5? 4.0 Applications 5? 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5? Control equipment Switching mode

4.6. 2sk2380.pdf Size:29K _panasonic

2SK2386
2SK2386

Silicon Junction FETs (Small Signal) 2SK2380 2SK2380 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency 1.6 0.15 For infrared sensor 0.4 0.8 0.1 0.4 Features 1 Low gate-source leakage current, IGSS 3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available. Abs

Datasheet: 2SK2361 , 2SK2362 , 2SK2365 , 2SK2365-Z , 2SK2366 , 2SK2366-Z , 2SK2371 , 2SK2372 , IRF3205 , 2SK2388 , 2SK2389 , 2SK2402 , 2SK3268 , 2SK3269 , 2SK3272-01SJ , 2SK3277 , 2SK3288ENTL .

 


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