2SK2389 Todos los transistores

 ..1. Size:58K  inchange semiconductor
 2sk2389.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 700V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage 30 V

 8.1. Size:393K  toshiba
 2sk2381.pdf

2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.

 8.2. Size:288K  toshiba
 2sk2385.pdf

 8.3. Size:411K  toshiba
 2sk2382.pdf

2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.13 (typ.) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5

 8.4. Size:32K  panasonic
 2sk2383.pdf

Power F-MOS FETs 2SK2383 2SK2383 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Control equipmen

 8.5. Size:29K  panasonic
 2sk2380.pdf

Silicon Junction FETs (Small Signal) 2SK2380 2SK2380 Silicon N-Channel Junction Unit mm For impedance conversion in low frequency 1.6 0.15 For infrared sensor 0.4 0.8 0.1 0.4 Features 1 Low gate-source leakage current, IGSS 3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available.

 8.6. Size:58K  inchange semiconductor
 2sk2386.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

 8.7. Size:54K  inchange semiconductor
 2sk2388.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)