2SK2389 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2389
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
Тип корпуса: TO220AB
2SK2389 Datasheet (PDF)
2sk2389.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2389 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 700V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 700 V VGS Gate-Source Voltage 30 V
2sk2381.pdf
2SK2381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2381 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.56 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.
2sk2382.pdf
2SK2382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2382 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.13 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 1.5~3.5
2sk2383.pdf
Power F-MOS FETs 2SK23832SK2383Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen
2sk2380.pdf
Silicon Junction FETs (Small Signal) 2SK23802SK2380Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency1.6 0.15For infrared sensor0.4 0.8 0.1 0.4 Features1 Low gate-source leakage current, IGSS3 Small capacitance of Ciss, Coss, Crss Downsizing of sets by mini-type package and automatic insertion by2taping/magazine packing are available.
2sk2386.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2386 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V
2sk2388.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2388 DESCRIPTION Drain Current ID= 3.5A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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