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APT5015BLC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5015BLC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 370 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO247

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APT5015BLC datasheet

 ..1. Size:28K  apt
 apt5015blc.pdf pdf_icon

APT5015BLC

APT5015BLC 500V 32A 0.150 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D Lower G

 6.1. Size:60K  apt
 apt5015bvr.pdf pdf_icon

APT5015BLC

APT5015BVR 500V 32A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 6.2. Size:115K  apt
 apt5015bvfrg.pdf pdf_icon

APT5015BLC

APT5015BVFR APT5015SVFR 500V 32A 0.150 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.

 6.3. Size:375K  inchange semiconductor
 apt5015bvfr.pdf pdf_icon

APT5015BLC

isc N-Channel MOSFET Transistor APT5015BVFR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

MOSTRAR MÁS

Otros transistores... IRF9520N , IRF9520NL , IRF9520NS , IRF9521 , IRF9522 , IRF9523 , IRF9530 , IRF9530N , IRF3205 , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF9540N , IRF9540NL .

 

 

 


 
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