2SK4047-01S Todos los transistores

 

2SK4047-01S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK4047-01S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 95 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO263

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2SK4047-01S Datasheet (PDF)

 ..1. Size:530K  fuji
2sk4047-01s.pdf

2SK4047-01S
2SK4047-01S

http://www.fujielectric.co.jp/products/semiconductor/index.html 2SK4047-01S Automotive FUJI POWER MOSFET Trench Power MOSFET (2nd Gen.) series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) 100% avalanche tested Gate (G) Applications Source (S) Automoti

 8.1. Size:239K  toshiba
2sk4042.pdf

2SK4047-01S
2SK4047-01S

2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4042 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 8.2. Size:254K  sanyo
2sk4043ls.pdf

2SK4047-01S
2SK4047-01S

Ordering number : EN8642 2SK4043LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4043LSApplicationsFeatures Low ON-resistance. 2.5V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID

 8.3. Size:78K  sanyo
2sk404.pdf

2SK4047-01S
2SK4047-01S

Ordering number:EN1403AN-Channel Junction Silicon FET2SK404HF Amplifier, AF Amplifier ApplicationsFeatures Package Dimensions Large yfs.unit:mm Low noise.2034A Small Crss.[2SK404]2.24.00.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.0SANYO : SPA3.8nomSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con

 8.4. Size:279K  inchange semiconductor
2sk4042.pdf

2SK4047-01S
2SK4047-01S

isc N-Channel MOSFET Transistor 2SK4042FEATURESDrain Current : I =8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.97(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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