2SK4047-01S - описание и поиск аналогов

http //www.fujielectric.co.jp/products/semiconductor/index.html 2SK4047-01S Automotive FUJI POWER MOSFET Trench Power MOSFET (2nd Gen.) series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) 100% avalanche tested Gate (G) Applications Source (S) Automoti

2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4042 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.7 (typ.) High forward transfer admittance Yfs = 6.5S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

Ordering number EN8642 2SK4043LS N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4043LS Applications Features Low ON-resistance. 2.5V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID

Ordering number EN1403A N-Channel Junction Silicon FET 2SK404 HF Amplifier, AF Amplifier Applications Features Package Dimensions Large yfs . unit mm Low noise. 2034A Small Crss. [2SK404] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 SANYO SPA 3.8nom Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con

isc N-Channel MOSFET Transistor 2SK4042 FEATURES Drain Current I =8.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.97 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno