2SK4047-01S - Даташиты. Аналоги. Основные параметры

http://www.fujielectric.co.jp/products/semiconductor/index.html 2SK4047-01S Automotive FUJI POWER MOSFET Trench Power MOSFET (2nd Gen.) series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) 100% avalanche tested Gate (G) Applications Source (S) Automoti

2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4042 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

Ordering number : EN8642 2SK4043LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4043LSApplicationsFeatures Low ON-resistance. 2.5V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID

Ordering number:EN1403AN-Channel Junction Silicon FET2SK404HF Amplifier, AF Amplifier ApplicationsFeatures Package Dimensions Large yfs.unit:mm Low noise.2034A Small Crss.[2SK404]2.24.00.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.0SANYO : SPA3.8nomSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con

isc N-Channel MOSFET Transistor 2SK4042FEATURESDrain Current : I =8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.97(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno