2SK4065-DL-1E Todos los transistores

 

2SK4065-DL-1E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4065-DL-1E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 460 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO263

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2SK4065-DL-1E datasheet

 ..1. Size:264K  sanyo
2sk4065-dl-1e.pdf pdf_icon

2SK4065-DL-1E

2SK4065 Ordering number ENA0324A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4065 Applications Features ON-resistance RDS(on)1=4.6m (typ.) Input capacitance Ciss=12200pF (typ.) 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75

 7.1. Size:258K  sanyo
2sk4065.pdf pdf_icon

2SK4065-DL-1E

Ordering number ENA0324 2SK4065 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4065 Applications Features Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Gate

 7.2. Size:283K  inchange semiconductor
2sk4065k.pdf pdf_icon

2SK4065-DL-1E

isc N-Channel MOSFET Transistor 2SK4065K FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 7.3. Size:357K  inchange semiconductor
2sk4065b.pdf pdf_icon

2SK4065-DL-1E

isc N-Channel MOSFET Transistor 2SK4065B FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

Otros transistores... 2SK4035 , 2SK4047-01S , 2SK4057-S27-AY , 2SK4057-ZK-E1-AY , 2SK4057-ZK-E2-AY , 2SK4058-S27-AY , 2SK4058-ZK-E1-AY , 2SK4058-ZK-E2-AY , BS170 , 2SK401 , 2SK402 , 2SK403 , 2SK888 , 2SK889 , 2SK890 , 2SK891 , 2SK892 .

 

 

 


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