2SK401 Todos los transistores

 ..1. Size:117K  hitachi
 2sk401.pdf

"2SK401" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401" Powered by ICminer.com Electronic-Library Service CopyRight 2003

 ..2. Size:276K  inchange semiconductor
 2sk401.pdf

isc N-Channel MOSFET Transistor 2SK401 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.1. Size:214K  toshiba
 2sk4015.pdf

2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4015 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.60 (typ.) High forward transfer admittance Yfs = 7.4 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

 0.2. Size:225K  toshiba
 2sk4016.pdf

2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4016 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.33 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 0.3. Size:225K  toshiba
 2sk4017.pdf

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.07 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS

 0.4. Size:237K  toshiba
 2sk4014.pdf

2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V

 0.5. Size:772K  toshiba
 2sk4019.pdf

2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - -MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.17 (typ.) High forward transfer admittance Yfs = 4.5 S (ty

 0.6. Size:221K  toshiba
 2sk4013.pdf

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK4013 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

 0.7. Size:215K  toshiba
 2sk4012.pdf

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK4012 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0. 33 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 0.8. Size:775K  toshiba
 2sk4018.pdf

2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - -MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.28 (typ.) High forward transfer admittance Yfs

 0.9. Size:279K  inchange semiconductor
 2sk4015.pdf

isc N-Channel MOSFET Transistor 2SK4015 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.86 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.10. Size:279K  inchange semiconductor
 2sk4016.pdf

isc N-Channel MOSFET Transistor 2SK4016 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.11. Size:354K  inchange semiconductor
 2sk4017.pdf

isc N-Channel MOSFET Transistor 2SK4017 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.12. Size:240K  inchange semiconductor
 2sk4014.pdf

isc N-Channel MOSFET Transistor 2SK4014 I2SK4014 FEATURES Low drain-source on-resistance RDS(on) 2.0 . Enhancement mode Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Converter, Relay Drive and Motor Drive Applications ABSOLUTE MAXIMUM RATINGS(T

 0.13. Size:355K  inchange semiconductor
 2sk4019.pdf

isc N-Channel MOSFET Transistor 2SK4019 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.23 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 0.14. Size:275K  inchange semiconductor
 2sk4013.pdf

iscN-Channel MOSFET Transistor 2SK4013 FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 0.15. Size:279K  inchange semiconductor
 2sk4012.pdf

isc N-Channel MOSFET Transistor 2SK4012 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.16. Size:355K  inchange semiconductor
 2sk4018.pdf

isc N-Channel MOSFET Transistor 2SK4018 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen