2SK401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK401
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET 2SK401

2SK401 Datasheet (PDF)

..1. Size:117K hitachi
2sk401.pdf

"2SK401"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401"Powered by ICminer.com Electronic-Library Service CopyRight 2003

..2. Size:276K inchange semiconductor
2sk401.pdf

isc N-Channel MOSFET Transistor 2SK401FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

0.1. Size:214K toshiba
2sk4015.pdf

2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4015 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max

0.2. Size:225K toshiba
2sk4016.pdf

2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4016 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

0.3. Size:225K toshiba
2sk4017.pdf

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.07 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS

0.4. Size:237K toshiba
2sk4014.pdf

2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V

0.5. Size:772K toshiba
2sk4019.pdf

2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.17 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (ty

0.6. Size:221K toshiba
2sk4013.pdf

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK4013 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab

0.7. Size:215K toshiba
2sk4012.pdf

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

0.8. Size:775K toshiba
2sk4018.pdf

2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.28 (typ.) High forward transfer admittance : |Yfs|

0.9. Size:279K inchange semiconductor
2sk4015.pdf

isc N-Channel MOSFET Transistor 2SK4015FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.86(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

0.10. Size:279K inchange semiconductor
2sk4016.pdf

isc N-Channel MOSFET Transistor 2SK4016FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.11. Size:354K inchange semiconductor
2sk4017.pdf

isc N-Channel MOSFET Transistor 2SK4017FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.12. Size:240K inchange semiconductor
2sk4014.pdf

isc N-Channel MOSFET Transistor 2SK4014I2SK4014FEATURESLow drain-source on-resistance:RDS(on) 2.0.Enhancement mode:Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converter, Relay Drive and Motor DriveApplicationsABSOLUTE MAXIMUM RATINGS(T

0.13. Size:355K inchange semiconductor
2sk4019.pdf

isc N-Channel MOSFET Transistor 2SK4019FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.23(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

0.14. Size:275K inchange semiconductor
2sk4013.pdf

iscN-Channel MOSFET Transistor 2SK4013FEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

0.15. Size:279K inchange semiconductor
2sk4012.pdf

isc N-Channel MOSFET Transistor 2SK4012FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

0.16. Size:355K inchange semiconductor
2sk4018.pdf

isc N-Channel MOSFET Transistor 2SK4018FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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