2SK401 Datasheet and Replacement
Type Designator: 2SK401
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 52
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO3
- MOSFET Cross-Reference Search
2SK401 Datasheet (PDF)
..1. Size:117K hitachi
2sk401.pdf 
"2SK401"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401"Powered by ICminer.com Electronic-Library Service CopyRight 2003
..2. Size:276K inchange semiconductor
2sk401.pdf
isc N-Channel MOSFET Transistor 2SK401FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
0.1. Size:214K toshiba
2sk4015.pdf
2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4015 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.60 (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max
0.2. Size:225K toshiba
2sk4016.pdf
2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4016 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso
0.3. Size:225K toshiba
2sk4017.pdf
2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.07 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS
0.4. Size:237K toshiba
2sk4014.pdf
2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 1.6 (typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V
0.5. Size:772K toshiba
2sk4019.pdf
2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.17 (typ.) High forward transfer admittance : |Yfs| = 4.5 S (ty
0.6. Size:221K toshiba
2sk4013.pdf
2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK4013 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab
0.7. Size:215K toshiba
2sk4012.pdf
2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0. 33 (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M
0.8. Size:775K toshiba
2sk4018.pdf
2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit: mmApplications MAX 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.28 (typ.) High forward transfer admittance : |Yfs|
0.9. Size:279K inchange semiconductor
2sk4015.pdf
isc N-Channel MOSFET Transistor 2SK4015FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.86(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.10. Size:279K inchange semiconductor
2sk4016.pdf
isc N-Channel MOSFET Transistor 2SK4016FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.11. Size:354K inchange semiconductor
2sk4017.pdf
isc N-Channel MOSFET Transistor 2SK4017FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.12. Size:240K inchange semiconductor
2sk4014.pdf
isc N-Channel MOSFET Transistor 2SK4014I2SK4014FEATURESLow drain-source on-resistance:RDS(on) 2.0.Enhancement mode:Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converter, Relay Drive and Motor DriveApplicationsABSOLUTE MAXIMUM RATINGS(T
0.13. Size:355K inchange semiconductor
2sk4019.pdf
isc N-Channel MOSFET Transistor 2SK4019FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.23(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
0.14. Size:275K inchange semiconductor
2sk4013.pdf
iscN-Channel MOSFET Transistor 2SK4013FEATURESLow drain-source on-resistance:RDS(ON) = 1.7 (MAX)Enhancement mode:Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.15. Size:279K inchange semiconductor
2sk4012.pdf
isc N-Channel MOSFET Transistor 2SK4012FEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.16. Size:355K inchange semiconductor
2sk4018.pdf
isc N-Channel MOSFET Transistor 2SK4018FEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.35(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
Datasheet: 2SK4047-01S
, 2SK4057-S27-AY
, 2SK4057-ZK-E1-AY
, 2SK4057-ZK-E2-AY
, 2SK4058-S27-AY
, 2SK4058-ZK-E1-AY
, 2SK4058-ZK-E2-AY
, 2SK4065-DL-1E
, 13N50
, 2SK402
, 2SK403
, 2SK888
, 2SK889
, 2SK890
, 2SK891
, 2SK892
, 2SK893
.
History: AOSN32338C
| DH150N12B
| 12N65KG-TF1-T
| CS840FA9D
| R5016ANJ
| BSB280N15NZ3G
| ELM13401CA
Keywords - 2SK401 MOSFET datasheet
2SK401 cross reference
2SK401 equivalent finder
2SK401 lookup
2SK401 substitution
2SK401 replacement
