2SK1017-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1017-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 200 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de 2SK1017-01 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK1017-01 datasheet
7.1. Size:244K 1
2sk1017.pdf 
FUJI POWER MOSFET 2SK1017 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings and
7.2. Size:203K inchange semiconductor
2sk1017.pdf
isc N-Channel MOSFET Transistor 2SK1017 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS
8.1. Size:220K 1
2sk1019.pdf
FUJI POWER MOSFET 2SK1019 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3PL 0.3 Low on-resistance 0.2 20.5 Max 5 3.2 No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee 2 3 0.2 0.2 1.1 0.2 Applications 0.3 3.0 0.2 Switching regulators 0.6+0.2 5.45 0.2 5.45 UPS 1. Gate 2. Drain DC-DC co
8.7. Size:254K fuji
2sk1014-01.pdf
FUJI POWER MOSFET 2SK1014-01 N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGSS= 30V Guarantee Applications Switching regulators UPS DC-DC converters 3. Source General purpose power amplifier JEDEC EIAJ SC-65 Equivalent circuit schematic Maximum ratings
8.11. Size:203K inchange semiconductor
2sk1014.pdf
isc N-Channel MOSFET Transistor 2SK1014 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS
8.12. Size:203K inchange semiconductor
2sk1018.pdf
isc N-Channel MOSFET Transistor 2SK1018 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS
8.13. Size:202K inchange semiconductor
2sk1011.pdf
isc N-Channel MOSFET Transistor 2SK1011 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G
8.14. Size:199K inchange semiconductor
2sk1010.pdf
isc N-Channel MOSFET Transistor 2SK1010 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)
8.15. Size:203K inchange semiconductor
2sk1016.pdf
isc N-Channel MOSFET Transistor 2SK1016 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS
8.16. Size:203K inchange semiconductor
2sk1013.pdf
isc N-Channel MOSFET Transistor 2SK1013 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G
8.17. Size:63K inchange semiconductor
2sk1015.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 30 V G
8.18. Size:203K inchange semiconductor
2sk1012.pdf
isc N-Channel MOSFET Transistor 2SK1012 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS G
8.19. Size:200K inchange semiconductor
2sk1019.pdf
isc N-Channel MOSFET Transistor 2SK1019 DESCRIPTION Drain Current I =35A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS
Otros transistores... 2SK957-M
, 2SK957-MR
, 2SK1011-01
, 2SK1012-01
, 2SK1014-01
, 2SK1015
, 2SK1015-01
, 2SK1016-01
, IRF830
, 2SK1018
, 2SK1020
, 2SK1021
, 2SK1022
, 2SK1023-01
, 2SK1024-01
, 2SK2023-01
, 2SK2027-01
.
History: IRLI540G
