All MOSFET. 2SK1017-01 Datasheet

 

2SK1017-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1017-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 150 W
   Maximum Drain-Source Voltage |Vds|: 450 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Drain Current |Id|: 20 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 200 nS
   Drain-Source Capacitance (Cd): 320 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
   Package: TO3P

 2SK1017-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1017-01 Datasheet (PDF)

 ..1. Size:138K  fuji
2sk1017-01.pdf

2SK1017-01
2SK1017-01

 7.1. Size:244K  1
2sk1017.pdf

2SK1017-01
2SK1017-01

FUJI POWER MOSFET2SK1017N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings and

 7.2. Size:203K  inchange semiconductor
2sk1017.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1017DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

 8.1. Size:220K  1
2sk1019.pdf

2SK1017-01
2SK1017-01

FUJI POWER MOSFET2SK1019N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PL0.3Low on-resistance 0.220.5 Max 53.2No secondary breakdownLow driving powerHigh voltageVGSS= 30V Guarantee230.2 0.21.10.2Applications0.33.00.2 Switching regulators 0.6+0.25.450.2 5.45UPS1. Gate2. Drain DC-DC co

 8.2. Size:134K  fuji
2sk1011-01.pdf

2SK1017-01
2SK1017-01

 8.3. Size:57K  fuji
2sk1018.pdf

2SK1017-01

 8.4. Size:133K  fuji
2sk1013-01.pdf

2SK1017-01
2SK1017-01

 8.5. Size:169K  fuji
2sk1012-01.pdf

2SK1017-01
2SK1017-01

 8.6. Size:173K  fuji
2sk1015-01.pdf

2SK1017-01
2SK1017-01

 8.7. Size:254K  fuji
2sk1014-01.pdf

2SK1017-01
2SK1017-01

FUJI POWER MOSFET2SK1014-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-65Equivalent circuit schematicMaximum ratings

 8.8. Size:1624K  fuji
2sk1016.pdf

2SK1017-01
2SK1017-01

 8.9. Size:167K  fuji
2sk1010-01.pdf

2SK1017-01
2SK1017-01

 8.10. Size:176K  fuji
2sk1016-01.pdf

2SK1017-01
2SK1017-01

 8.11. Size:203K  inchange semiconductor
2sk1014.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1014DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

 8.12. Size:203K  inchange semiconductor
2sk1018.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1018DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

 8.13. Size:202K  inchange semiconductor
2sk1011.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1011DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

 8.14. Size:199K  inchange semiconductor
2sk1010.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1010DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

 8.15. Size:203K  inchange semiconductor
2sk1016.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1016DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS

 8.16. Size:203K  inchange semiconductor
2sk1013.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1013DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G

 8.17. Size:63K  inchange semiconductor
2sk1015.pdf

2SK1017-01
2SK1017-01

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1015 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV Gate-Source Voltage 30 V G

 8.18. Size:203K  inchange semiconductor
2sk1012.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1012DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS G

 8.19. Size:200K  inchange semiconductor
2sk1019.pdf

2SK1017-01
2SK1017-01

isc N-Channel MOSFET Transistor 2SK1019DESCRIPTIONDrain Current I =35A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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