2SK1023-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1023-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 60 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 65 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia entre drenaje y fuente RDS(on): 4.5 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET 2SK1023-01
2SK1023-01 Datasheet (PDF)
2sk1023.pdf
isc N-Channel MOSFET Transistor 2SK1023DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1022.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GSV Gat
2sk1020.pdf
isc N-Channel MOSFET Transistor 2SK1020DESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
2sk1029.pdf
isc N-Channel MOSFET Transistor 2SK1029FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
2sk1024.pdf
isc N-Channel MOSFET Transistor 2SK1024DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
2sk1021.pdf
isc N-Channel MOSFET Transistor 2SK1021DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
