2SK1023-01 Todos los transistores

 

2SK1023-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1023-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 65 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 4.5 Ohm

Empaquetado / Estuche: TO220AB

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2SK1023-01 Datasheet (PDF)

1.1. 2sk1023-01.pdf Size:166K _update

2SK1023-01
2SK1023-01



3.1. 2sk1023.pdf Size:200K _inchange_semiconductor

2SK1023-01
2SK1023-01

isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION ·Drain Current –I =4A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain

 4.1. 2sk1020.pdf Size:170K _update

2SK1023-01
2SK1023-01



4.2. 2sk1022.pdf Size:60K _update

2SK1023-01
2SK1023-01

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat

 4.3. 2sk1024-01.pdf Size:160K _update

2SK1023-01
2SK1023-01



4.4. 2sk1021.pdf Size:57K _update

2SK1023-01

查询2SK1021供应商

 4.5. 2sk1020.pdf Size:223K _update-mosfet

2SK1023-01
2SK1023-01

isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION ·Drain Current –I =30A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol

4.6. 2sk1022.pdf Size:200K _inchange_semiconductor

2SK1023-01
2SK1023-01

isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION ·Drain Current –I =2.5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol

4.7. 2sk1024.pdf Size:200K _inchange_semiconductor

2SK1023-01
2SK1023-01

isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION ·Drain Current –I =3.5A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Dra

4.8. 2sk1021.pdf Size:200K _inchange_semiconductor

2SK1023-01
2SK1023-01

isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V =800V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta

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