2SK1023-01 Specs and Replacement
Type Designator: 2SK1023-01
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO220AB
2SK1023-01 substitution
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2SK1023-01 datasheet
2sk1023.pdf
isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain... See More ⇒
Detailed specifications: 2SK1015, 2SK1015-01, 2SK1016-01, 2SK1017-01, 2SK1018, 2SK1020, 2SK1021, 2SK1022, K2611, 2SK1024-01, 2SK2023-01, 2SK2027-01, 2SK2100-01MR, 2SK2133-Z, 2SK2134-Z, 2SK2146, 2SK2147-01R
Keywords - 2SK1023-01 MOSFET specs
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History: PJL9418 | DM5N65E-F
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