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2SK2150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2150

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 730 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO3PN

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2SK2150 Datasheet (PDF)

0.1. 2sk2150.pdf Size:486K _toshiba

2SK2150
2SK2150

0.2. 2sk2150.pdf Size:221K _inchange_semiconductor

2SK2150
2SK2150

isc N-Channel MOSFET Transistor 2SK2150DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

 8.1. 2sk2157.pdf Size:60K _1

2SK2150
2SK2150

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2157N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2157 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V. This product has a low ON resistance and 1.5 0.12.0 0.2superb switching characteristics and is ideal fo

8.2. 2sk2152.pdf Size:93K _sanyo

2SK2150
2SK2150

Ordering number:ENN4569AN-Channel Silicon MOSFET2SK2152Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2152]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta

 8.3. 2sk2151.pdf Size:95K _sanyo

2SK2150
2SK2150

Ordering number:ENN4568AN-Channel Silicon MOSFET2SK2151Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2151]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta

8.4. 2sk2154.pdf Size:87K _sanyo

2SK2150
2SK2150

Ordering number:ENN4689N-Channel Silicon MOSFET2SK2154Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK2154]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2154]6.5 2.35.0 0.540.5

 8.5. rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf Size:71K _renesas

2SK2150
2SK2150

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. 2sk2157c.pdf Size:213K _renesas

2SK2150
2SK2150

Preliminary Data Sheet 2SK2157C R07DS1264EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 18, 2015Description The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

8.7. 2sk2159.pdf Size:42K _nec

2SK2150
2SK2150

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2159N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2159 is an N-channel vertical type MOS FET featur-PACKAGE DIMENSIONSing an operating voltage as low as 1.5 V. Because it can be(in millimeters)driven on a low voltage and it is not necessary to consider4.5 0.1driving current, the 2SK2159 is suitable for driving actuators of1.6

8.8. 2sk2158.pdf Size:60K _nec

2SK2150
2SK2150

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2158N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2158 is an N-channel vertical type MOS FET featur-PACKAGE DIMENSIONSing an operating voltage as low as 1.5 V. Because it can be(in millimeters)driven on a low voltage and it is not necessary to consider2.8 0.2driving current, the 2SK2158 is suitable for use in low-voltage1.5 0.

8.9. 2sk213 2sk214 2sk215 2sk216.pdf Size:33K _hitachi

2SK2150
2SK2150

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

8.10. 2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf Size:199K _no

2SK2150

8.11. 2sk2159.pdf Size:1013K _kexin

2SK2150
2SK2150

SMD Type MOSFETN-Channel MOSFET2SK21591.70 0.1 Features VDS (V) = 60V ID = 2 AD0.42 0.10.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V)Internal diode1.GateG2.DrainGate protection diode3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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