2SK2150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK2150DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2157N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2157 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of5.7 0.1an IC operating at 5 V. This product has a low ON resistance and 1.5 0.12.0 0.2superb switching characteristics and is ideal fo

Ordering number:ENN4568AN-Channel Silicon MOSFET2SK2151Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2151]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta

Ordering number:ENN4689N-Channel Silicon MOSFET2SK2154Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK2154]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2154]6.5 2.35.0 0.540.5

Ordering number:ENN4569AN-Channel Silicon MOSFET2SK2152Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2152]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta

Preliminary Data Sheet 2SK2157C R07DS1264EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 18, 2015Description The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2159N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2159 is an N-channel vertical type MOS FET featur-PACKAGE DIMENSIONSing an operating voltage as low as 1.5 V. Because it can be(in millimeters)driven on a low voltage and it is not necessary to consider4.5 0.1driving current, the 2SK2159 is suitable for driving actuators of1.6

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2158N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2158 is an N-channel vertical type MOS FET featur-PACKAGE DIMENSIONSing an operating voltage as low as 1.5 V. Because it can be(in millimeters)driven on a low voltage and it is not necessary to consider2.8 0.2driving current, the 2SK2158 is suitable for use in low-voltage1.5 0.

2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D

SMD Type MOSFETN-Channel MOSFET2SK21591.70 0.1 Features VDS (V) = 60V ID = 2 AD0.42 0.10.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V)Internal diode1.GateG2.DrainGate protection diode3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage

2SK2159www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

2SK2158-T1Bwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG