2SK2150 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK2150 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2157 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 5.7 0.1 an IC operating at 5 V. This product has a low ON resistance and 1.5 0.1 2.0 0.2 superb switching characteristics and is ideal fo

Ordering number ENN4568A N-Channel Silicon MOSFET 2SK2151 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2151] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta

Ordering number ENN4689 N-Channel Silicon MOSFET 2SK2154 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK2154] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK2154] 6.5 2.3 5.0 0.5 4 0.5

Ordering number ENN4569A N-Channel Silicon MOSFET 2SK2152 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2152] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta

Preliminary Data Sheet 2SK2157C R07DS1264EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 18, 2015 Description The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS ing an operating voltage as low as 1.5 V. Because it can be (in millimeters) driven on a low voltage and it is not necessary to consider 4.5 0.1 driving current, the 2SK2159 is suitable for driving actuators of 1.6

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2158 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS ing an operating voltage as low as 1.5 V. Because it can be (in millimeters) driven on a low voltage and it is not necessary to consider 2.8 0.2 driving current, the 2SK2158 is suitable for use in low-voltage 1.5 0.

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D

SMD Type MOSFET N-Channel MOSFET 2SK2159 1.70 0.1 Features VDS (V) = 60V ID = 2 A D 0.42 0.1 0.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V) Internal diode 1.Gate G 2.Drain Gate protection diode 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage

2SK2159 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

2SK2158-T1B www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G