2SK4096LS-1E Todos los transistores

 

2SK4096LS-1E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK4096LS-1E
   Código: K4096
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.2 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO220F

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2SK4096LS-1E Datasheet (PDF)

 ..1. Size:250K  onsemi
2sk4096ls-1e.pdf

2SK4096LS-1E
2SK4096LS-1E

Ordering number : ENA0774C2SK4096LSN-Channel Power MOSFEThttp://onsemi.com500V, 8A, 850m , TO-220F-3FSFeatures ON-resistance RDS(on)=0.65 (typ.) Input capacitance Ciss=600pF 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 30 VIDc*1 Lim

 5.1. Size:48K  sanyo
2sk4096ls.pdf

2SK4096LS-1E
2SK4096LS-1E

Ordering number : ENA0774 2SK4096LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4096LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 5.2. Size:280K  inchange semiconductor
2sk4096ls.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4096LSFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.1. Size:48K  sanyo
2sk4097ls.pdf

2SK4096LS-1E
2SK4096LS-1E

Ordering number : ENA0775 2SK4097LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4097LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 8.2. Size:345K  sanyo
2sk4094.pdf

2SK4096LS-1E
2SK4096LS-1E

2SK4094Ordering number : ENA0523ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4094ApplicationsFeatures ON-resistance RDS(on)1=3.8m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 V

 8.3. Size:67K  sanyo
2sk4099ls.pdf

2SK4096LS-1E
2SK4096LS-1E

Ordering number : ENA0777A 2SK4099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4099LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 8.4. Size:52K  sanyo
2sk4098ls.pdf

2SK4096LS-1E
2SK4096LS-1E

Ordering number : ENA0776 2SK4098LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4098LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications

 8.5. Size:106K  renesas
2sk4093.pdf

2SK4096LS-1E
2SK4096LS-1E

2SK4093 Silicon N Channel MOS FET High Speed Power Switching REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Features Capable of 2.5V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. Gate32S1Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain

 8.6. Size:284K  renesas
2sk4090-s27-zk.pdf

2SK4096LS-1E
2SK4096LS-1E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:299K  renesas
2sk4092.pdf

2SK4096LS-1E
2SK4096LS-1E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:283K  renesas
2sk4091-s27-zk.pdf

2SK4096LS-1E
2SK4096LS-1E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:119K  renesas
rej03g1534 2sk4093ds.pdf

2SK4096LS-1E
2SK4096LS-1E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:274K  onsemi
2sk4094-1e.pdf

2SK4096LS-1E
2SK4096LS-1E

Ordering number : ENA0523B2SK4094N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 5m , TO-220-3LFeatures ON-resistance RDS(on)1=3.8m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain C

 8.11. Size:280K  inchange semiconductor
2sk4097ls.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4097LSFEATURESDrain Current : I = 9.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.12. Size:286K  inchange semiconductor
2sk4091d.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4091DFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.13. Size:259K  inchange semiconductor
2sk4094.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4094FEATURESDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Motor Dr

 8.14. Size:280K  inchange semiconductor
2sk4099ls.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4099LSFEATURESDrain Current : I = 8.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.94(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 8.15. Size:354K  inchange semiconductor
2sk4091i.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4091IFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

 8.16. Size:280K  inchange semiconductor
2sk4098ls.pdf

2SK4096LS-1E
2SK4096LS-1E

isc N-Channel MOSFET Transistor 2SK4098LSFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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