2SK4096LS-1E MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK4096LS-1E
Marking Code: K4096
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 7.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 24 nC
Rise Time (tr): 46 nS
Drain-Source Capacitance (Cd): 130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: TO220F
2SK4096LS-1E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK4096LS-1E Datasheet (PDF)
2sk4096ls-1e.pdf
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Ordering number : ENA0774C2SK4096LSN-Channel Power MOSFEThttp://onsemi.com500V, 8A, 850m , TO-220F-3FSFeatures ON-resistance RDS(on)=0.65 (typ.) Input capacitance Ciss=600pF 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 30 VIDc*1 Lim
2sk4096ls.pdf
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Ordering number : ENA0774 2SK4096LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4096LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4096ls.pdf
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isc N-Channel MOSFET Transistor 2SK4096LSFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4097ls.pdf
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Ordering number : ENA0775 2SK4097LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4097LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4094.pdf
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2SK4094Ordering number : ENA0523ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4094ApplicationsFeatures ON-resistance RDS(on)1=3.8m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 V
2sk4099ls.pdf
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Ordering number : ENA0777A 2SK4099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4099LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4098ls.pdf
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Ordering number : ENA0776 2SK4098LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4098LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4093.pdf
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2SK4093 Silicon N Channel MOS FET High Speed Power Switching REJ03G1534-0300 Rev.3.00 Feb 01, 2008 Features Capable of 2.5V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. Gate32S1Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain
2sk4090-s27-zk.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4092.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4091-s27-zk.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1534 2sk4093ds.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk4094-1e.pdf
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Ordering number : ENA0523B2SK4094N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 5m , TO-220-3LFeatures ON-resistance RDS(on)1=3.8m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain C
2sk4097ls.pdf
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isc N-Channel MOSFET Transistor 2SK4097LSFEATURESDrain Current : I = 9.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4091d.pdf
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isc N-Channel MOSFET Transistor 2SK4091DFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk4094.pdf
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isc N-Channel MOSFET Transistor 2SK4094FEATURESDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Motor Dr
2sk4099ls.pdf
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isc N-Channel MOSFET Transistor 2SK4099LSFEATURESDrain Current : I = 8.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.94(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4091i.pdf
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isc N-Channel MOSFET Transistor 2SK4091IFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk4098ls.pdf
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isc N-Channel MOSFET Transistor 2SK4098LSFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .