2SK557 Todos los transistores

 

2SK557 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK557
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de MOSFET 2SK557

 

2SK557 Datasheet (PDF)

 ..1. Size:251K  hitachi
2sk556 2sk557.pdf

2SK557
2SK557

 ..2. Size:236K  inchange semiconductor
2sk557.pdf

2SK557
2SK557

isc N-Channel MOSFET Transistor 2SK557DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

 9.1. Size:247K  hitachi
2sk554 2sk555.pdf

2SK557
2SK557

 9.2. Size:521K  hitachi
2sk55.pdf

2SK557
2SK557

 9.3. Size:248K  hitachi
2sk552 2sk553.pdf

2SK557
2SK557

 9.4. Size:184K  no
2sk559 2sk560.pdf

2SK557
2SK557

 9.5. Size:231K  inchange semiconductor
2sk556.pdf

2SK557
2SK557

isc N-Channel MOSFET Transistor 2SK556DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

 9.6. Size:239K  inchange semiconductor
2sk559.pdf

2SK557
2SK557

isc N-Channel MOSFET Transistor 2SK559DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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