2SK557 Datasheet and Replacement
Type Designator: 2SK557
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3P
2SK557 substitution
2SK557 Datasheet (PDF)
2sk557.pdf
isc N-Channel MOSFET Transistor 2SK557DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
Datasheet: 2SK4094-1E , 2SK4096LS-1E , 2SK529 , 2SK552 , 2SK553 , 2SK554 , 2SK555 , 2SK556 , P0903BDG , 2SK565 , 2SK568 , 2SK596S-B , 2SK528 , 2SK735 , 2SK738-Z , 2SK762 , 2SK762A .
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