2SK557 Specs and Replacement
Type Designator: 2SK557
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 720 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3P
2SK557 substitution
- MOSFET ⓘ Cross-Reference Search
2SK557 datasheet
2sk557.pdf
isc N-Channel MOSFET Transistor 2SK557 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies... See More ⇒
Detailed specifications: 2SK4094-1E, 2SK4096LS-1E, 2SK529, 2SK552, 2SK553, 2SK554, 2SK555, 2SK556, AO4407, 2SK565, 2SK568, 2SK596S-B, 2SK528, 2SK735, 2SK738-Z, 2SK762, 2SK762A
Keywords - 2SK557 MOSFET specs
2SK557 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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