2SK565 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK565

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 80 nS

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO3PN

Búsqueda de reemplazo de MOSFET 2SK565

2SK565 Datasheet (PDF)

1.1. 2sk565.pdf Size:53K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK565 FEATURES ·Drain Current –ID=9.6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.2. 2sk565.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK565 FEATURES ·Drain Current –I =9.6A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATING

5.1. 2sk568.pdf Size:256K _update

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5.2. 2sk566.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK566 FEATURES ·Drain Current –I =2.9A@ T =25℃ D C ·Drain Source Voltage- : V = 800V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies ,

5.3. 2sk560.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK560 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies

5.4. 2sk564.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK564 FEATURES ·Drain Current –I =32A@ T =25℃ D C ·Drain Source Voltage- : V = 100V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

5.5. 2sk562.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK562 FEATURES ·Drain Current –I =39A@ T =25℃ D C ·Drain Source Voltage- : V = 50V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·High speed power Switching. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

5.6. 2sk560.pdf Size:184K _no