2SK565 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK565
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO3PN

Búsqueda de reemplazo de MOSFET 2SK565

2SK565 Datasheet (PDF)

..1. Size:236K inchange semiconductor
2sk565.pdf

isc N-Channel MOSFET Transistor 2SK565FEATURESDrain Current I =9.6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATING

9.1. Size:256K toshiba
2sk568.pdf

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9.2. Size:184K no
2sk559 2sk560.pdf

9.3. Size:51K no
2sk56.pdf

9.4. Size:236K inchange semiconductor
2sk560.pdf

isc N-Channel MOSFET Transistor 2SK560DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

9.5. Size:236K inchange semiconductor
2sk562.pdf

isc N-Channel MOSFET Transistor 2SK562FEATURESDrain Current I =39A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

9.6. Size:236K inchange semiconductor
2sk564.pdf

isc N-Channel MOSFET Transistor 2SK564FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

9.7. Size:236K inchange semiconductor
2sk566.pdf

isc N-Channel MOSFET Transistor 2SK566FEATURESDrain Current I =2.9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies ,

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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