2SK565 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK565
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 125 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 80 nS
Resistencia drenaje-fuente RDS(on): 0.6 Ohm
Empaquetado / Estuche: TO3PN
Búsqueda de reemplazo de MOSFET 2SK565
2SK565 Datasheet (PDF)
0.1. 2sk565.pdf 
Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK565FEATURESDrain Current I =9.6A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATING
9.1. 2sk568.pdf Size:256K _toshiba
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9.2. 2sk56.pdf Size:51K _no
9.3. 2sk559 2sk560.pdf Size:184K _no
9.4. 2sk566.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK566FEATURESDrain Current I =2.9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies ,
9.5. 2sk560.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK560DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
9.6. 2sk564.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK564FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS
9.7. 2sk562.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK562FEATURESDrain Current I =39A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
