2SK565 Todos los transistores

isc N-Channel MOSFET Transistor 2SK565 FEATURES Drain Current I =9.6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATING

"MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1"

isc N-Channel MOSFET Transistor 2SK560 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies

isc N-Channel MOSFET Transistor 2SK562 FEATURES Drain Current I =39A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High speed power Switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

isc N-Channel MOSFET Transistor 2SK564 FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK566 FEATURES Drain Current I =2.9A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed especially for high voltage,high speed applications, such as off-line switching power supplies ,