2SK565 Specs and Replacement
Type Designator: 2SK565
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO3PN
2SK565 substitution
2SK565 datasheet
2sk565.pdf
isc N-Channel MOSFET Transistor 2SK565 FEATURES Drain Current I =9.6A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATING... See More ⇒
2sk568.pdf
"MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" "MG8G4EM1" ... See More ⇒
Detailed specifications: 2SK4096LS-1E , 2SK529 , 2SK552 , 2SK553 , 2SK554 , 2SK555 , 2SK556 , 2SK557 , BS170 , 2SK568 , 2SK596S-B , 2SK528 , 2SK735 , 2SK738-Z , 2SK762 , 2SK762A , 2SK764 .
Keywords - 2SK565 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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