2SK2414-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SK2414www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2412SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2412 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A)RDS(on)2 =

2SK2419External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 22 A I 100 A V = 60V, V = 0VD DSS DS GSI 88 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS D

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2410SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2410 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)RDS(on)2 =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2413SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2413 is N-Channel MOS Field Effect Transistor de-(in millimeter)signed for high speed switching applications.FEATURES4.5 0.2 Low On-Resistance8.0 0.2RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A)RDS(on)2 = 95 m MAX. (@ VGS =

2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2417 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.42 (typ.) High forward transfer admittance : |Y | = 7.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2415, 2SK2415-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2415 is N-Channel MOS Field Effect Transistor designed(in millimeters)for high voltage switching applications.2.3 0.26.5 0.25.0 0.2 0.5 0.1FEATURES4 Low On-ResistanceRDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2411, 2SK2411-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2411 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high speed switching applications.4.8 MAX.10.6 MAX.3.6 0.21.3 0.2FEATURES10.0 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)

isc N-Channel MOSFET Transistor 2SK2417DESCRIPTIONDrain Current I = 7.5A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV