2SK2414-Z PDF and Equivalents Search

 ..1. Size:218K  renesas
 2sk2414-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 7.1. Size:842K  cn vbsemi
 2sk2414.pdf

2SK2414 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor ... See More ⇒

 8.1. Size:88K  1
 2sk2412.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = ... See More ⇒

 8.2. Size:23K  1
 2sk2419.pdf

2SK2419 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 60 V V 60 V I = 100 A, V = 0V DSS (BR) DSS D GS V 20 V I 100 nA V = 20V GSS GSS GS I 22 A I 100 A V = 60V, V = 0V D DSS DS GS I 88 A V 2.0 4.0 V V = 10V, I = 250 A D (pulse) TH DS D... See More ⇒

 8.3. Size:87K  1
 2sk2410.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2410 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = ... See More ⇒

 8.4. Size:93K  1
 2sk2413.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2413 is N-Channel MOS Field Effect Transistor de- (in millimeter) signed for high speed switching applications. FEATURES 4.5 0.2 Low On-Resistance 8.0 0.2 RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS = ... See More ⇒

 8.5. Size:399K  toshiba
 2sk2417.pdf

2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2417 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.42 (typ.) High forward transfer admittance Y = 7.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 ... See More ⇒

 8.6. Size:400K  toshiba
 2sk241.pdf

2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.035 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain GPS = 28dB (typ.) Recommend operation voltage 5 15 V Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain... See More ⇒

 8.7. Size:50K  nec
 2sk2415-z.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed (in millimeters) for high voltage switching applications. 2.3 0.2 6.5 0.2 5.0 0.2 0.5 0.1 FEATURES 4 Low On-Resistance RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = ... See More ⇒

 8.8. Size:50K  nec
 2sk2411-z.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high speed switching applications. 4.8 MAX. 10.6 MAX. 3.6 0.2 1.3 0.2 FEATURES 10.0 Low On-Resistance RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)... See More ⇒

 8.9. Size:214K  inchange semiconductor
 2sk2417.pdf

isc N-Channel MOSFET Transistor 2SK2417 DESCRIPTION Drain Current I = 7.5A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V ... See More ⇒