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2SK2513-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2513-Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 380 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO263
 

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2SK2513-Z Datasheet (PDF)

 ..1. Size:114K  nec
 2sk2513-z.pdf pdf_icon

2SK2513-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2513, 2SK2513-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2513, 2SK2513-Z is N-Channel MOS Field Effect Tran-(in millimeters)sistor designed for high current switching applications.10.6 MAX. 4.8 MAX.FEATURES3.6 0.21.3 0.210.0 Low On-ResistanceRDS(on)1 = 15 m (VGS = 10 V,

 8.1. Size:119K  1
 2sk2515.pdf pdf_icon

2SK2513-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2515SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2515 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A)RDS (on)2 = 14 m

 8.2. Size:114K  1
 2sk2511.pdf pdf_icon

2SK2513-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2511SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2511 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.4.7 MAX.FEATURES15.7 MAX. 3.20.21.5 Super Low On-Resistance4RDS (on)1 = 27 m (VGS = 10 V, ID = 20 A)RDS (on)2 = 40 m

 8.3. Size:81K  1
 2sk2512.pdf pdf_icon

2SK2513-Z

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2512SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2512 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high current switching applications.FEATURES10.00.3 4.50.23.20.2 Low On-Resistance2.70.2RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A)RDS (on)2 = 23 m (V

MOSTRAR MÁS

Otros transistores... 2SK1275 , 2SK2411-Z , 2SK2414-Z , 2SK2415-Z , 2SK2475 , 2SK2499-Z , 2SK2503TL , 2SK2504TL , EMB04N03H , 2SK2527-01MR , 2SK2528-01 , 2SK2561-01R , 2SK2562-01R , 2SK3365 , 2SK3365-Z , 2SK3366 , 2SK3366-Z .

History: OSG60R580DF | CHM5506JGP | STU70N2LH5 | PMCXB900UE | 2SK2366 | APM2309AC | RSS090P03FU6TB

 

 
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