2SK4161D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK4161D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 132 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 490 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO3P

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2SK4161D Datasheet (PDF)

..1. Size:355K sanken-ele
2sk4161d.pdf

http://www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100A) (BR)DSS DR = 4.8m max. (V =10V, I =35A) DS(ON) GS DR = 6.0m max. (V =8V, I =35A) DS(ON)

..2. Size:259K inchange semiconductor
2sk4161d.pdf

isc N-Channel MOSFET Transistor 2SK4161DFEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.8m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies .ABSOLUTE MAXIMUM

8.1. Size:47K hitachi
2sk416s.pdf

8.2. Size:286K inchange semiconductor
2sk416s.pdf

isc N-Channel MOSFET Transistor 2SK416SFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.3. Size:354K inchange semiconductor
2sk416l.pdf

isc N-Channel MOSFET Transistor 2SK416LFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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