2SK4161D Datasheet and Replacement
Type Designator: 2SK4161D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 132 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 490 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO3P
2SK4161D substitution
2SK4161D Datasheet (PDF)
2sk4161d.pdf
http://www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100A) (BR)DSS DR = 4.8m max. (V =10V, I =35A) DS(ON) GS DR = 6.0m max. (V =8V, I =35A) DS(ON)
2sk4161d.pdf
isc N-Channel MOSFET Transistor 2SK4161DFEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.8m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies .ABSOLUTE MAXIMUM
2sk416s.pdf
isc N-Channel MOSFET Transistor 2SK416SFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Datasheet: 2SK3386-Z , 2SK4143-S17-AY , 2SK4144 , 2SK4144-AZ , 2SK4144-S12-AZ , 2SK4145-S19-AY , 2SK4146-S19-AY , 2SK4147 , IRFB4110 , 2SK422 , 2SK425 , 2SK433 , 2SK448 , 2SK484 , 2SK490 , 2SK1030A , 2SK1032 .
History: IPD50N06S4-09 | 2SK4144-S12-AZ
Keywords - 2SK4161D MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IPD50N06S4-09 | 2SK4144-S12-AZ
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