2SK433 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK433

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Id|ⓘ - Corriente continua de drenaje: 0.01 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm

Encapsulados: SOT23

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2SK433 datasheet

 ..1. Size:181K  isahaya
2sk433.pdf pdf_icon

2SK433

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi

 9.1. Size:210K  1
2sk430l 2sk430s.pdf pdf_icon

2SK433

 9.2. Size:224K  sanyo
2sk436.pdf pdf_icon

2SK433

Ordering number EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit mm 2050A Features [2SK436] Large yfs . 0.4 0.16 Ultralow noise figure. 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK436-app

 9.3. Size:23K  hitachi
2sk439.pdf pdf_icon

2SK433

2SK439 Silicon N-Channel MOS FET ADE-208-1172 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage VGSS 5V Drain current ID 30 mA Gate current IG 1mA Channel power dissipation Pch 300 mW Channel

Otros transistores... 2SK4144-AZ, 2SK4144-S12-AZ, 2SK4145-S19-AY, 2SK4146-S19-AY, 2SK4147, 2SK4161D, 2SK422, 2SK425, AO3400, 2SK448, 2SK484, 2SK490, 2SK1030A, 2SK1032, 2SK1032A, 2SK1038, 2SK1039