2SK433 Specs and Replacement
Type Designator: 2SK433
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm
Package: SOT23
2SK433 substitution
- MOSFET ⓘ Cross-Reference Search
2SK433 datasheet
2sk433.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possi... See More ⇒
2sk436.pdf
Ordering number EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AM tuner RF amplifiers and low-noise amplifiers. unit mm 2050A Features [2SK436] Large yfs . 0.4 0.16 Ultralow noise figure. 3 Small Crss. 0 to 0.1 Ultrasmall-sized package permitting 2SK436-app... See More ⇒
2sk439.pdf
2SK439 Silicon N-Channel MOS FET ADE-208-1172 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Outline SPAK 1. Gate 1 2 2. Source 3 3. Drain 2SK439 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 20 V Gate to source voltage VGSS 5V Drain current ID 30 mA Gate current IG 1mA Channel power dissipation Pch 300 mW Channel ... See More ⇒
Detailed specifications: 2SK4144-AZ, 2SK4144-S12-AZ, 2SK4145-S19-AY, 2SK4146-S19-AY, 2SK4147, 2SK4161D, 2SK422, 2SK425, AO3400, 2SK448, 2SK484, 2SK490, 2SK1030A, 2SK1032, 2SK1032A, 2SK1038, 2SK1039
Keywords - 2SK433 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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