2SK258 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK258
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   tonⓘ - Tiempo de encendido: 25 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.12 Ohm
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de MOSFET 2SK258

2SK258 Datasheet (PDF)

..1. Size:227K inchange semiconductor
2sk258.pdf

isc N-Channel MOSFET Transistor 2SK258DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT

0.1. Size:104K renesas
rej03g1020 2sk2586ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. Size:90K renesas
2sk2586.pdf

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange

0.3. Size:34K panasonic
2sk2580.pdf

Power F-MOS FETs 2SK25802SK2580(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08

0.4. Size:34K panasonic
2sk2581.pdf

Power F-MOS FETs 2SK25812SK2581(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08

0.5. Size:30K panasonic
2sk2588.pdf

Power F-MOS FETs 2SK25882SK2588Silicon N-Channel Power F-MOSUnit : mm FeaturesHigh-speed switching4.6 0.29.9 0.3 2.9 0.2Low ON-resistance3.2 0.1No secondary breakdownLow-voltage drive2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipment1 2 37Swit

0.6. Size:76K hitachi
2sk258h.pdf