2SK258 - описание и поиск аналогов

 

Аналоги 2SK258. Основные параметры


   Наименование производителя: 2SK258
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 200 °C
   ton ⓘ - Время включения: 25 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.12 Ohm
   Тип корпуса: TO3
 

 Аналог (замена) для 2SK258

   - подбор ⓘ MOSFET транзистора по параметрам

 

2SK258 даташит

 ..1. Size:227K  inchange semiconductor
2sk258.pdfpdf_icon

2SK258

isc N-Channel MOSFET Transistor 2SK258 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT

 0.1. Size:104K  renesas
rej03g1020 2sk2586ds.pdfpdf_icon

2SK258

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:90K  renesas
2sk2586.pdfpdf_icon

2SK258

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

 0.3. Size:34K  panasonic
2sk2580.pdfpdf_icon

2SK258

Power F-MOS FETs 2SK2580 2SK2580(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

Другие MOSFET... 2SK1060-Z , 2SK1063 , 2SK1064 , 2SK2320 , 2SK2328 , 2SK2329S , 2SK2407 , 2SK2563 , IRLB4132 , 2SK258H , 2SK259 , 2SK260 , 2SK260H , 2SK3402 , 2SK3402-ZK , 2SK3404 , 2SK3405 .

History: CS4N60A8HD | JFAM30N60E | FDN336P

 

 
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