Аналоги 2SK258. Основные параметры
Наименование производителя: 2SK258
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 200 °C
ton ⓘ - Время включения: 25 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.12 Ohm
Тип корпуса: TO3
Аналог (замена) для 2SK258
2SK258 даташит
2sk258.pdf
isc N-Channel MOSFET Transistor 2SK258 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT
rej03g1020 2sk2586ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2586.pdf
2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange
2sk2580.pdf
Power F-MOS FETs 2SK2580 2SK2580(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08
Другие MOSFET... 2SK1060-Z , 2SK1063 , 2SK1064 , 2SK2320 , 2SK2328 , 2SK2329S , 2SK2407 , 2SK2563 , IRLB4132 , 2SK258H , 2SK259 , 2SK260 , 2SK260H , 2SK3402 , 2SK3402-ZK , 2SK3404 , 2SK3405 .
History: CS4N60A8HD | JFAM30N60E | FDN336P
History: CS4N60A8HD | JFAM30N60E | FDN336P
Список транзисторов
Обновления
MOSFET: AOK065V65X2 | AOK065V120X2 | AOK033V120X2Q | AOK033V120X2 | AOB380A60L | AOB29S50L | AO3481C | AO3480 | APG068N04Q | APG068N04G | APG060N85D | APG054N10D | APG054N10 | APG050N85D | APG050N85 | APG046N01G
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