2SK260H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2607 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.0 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2604 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D

2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2608 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 3.73 (typ.) (ON) High forward transfer admittance : |Y | 2.6 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2603 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 3.0 (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0

2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2606 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 1.0 (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 640 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 1

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2602 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 0.9 (typ.) (ON) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMa

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2601 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.75 (typ.) (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2605 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS = 1.9 (typ.) (ON) High forward transfer admittance : |Y | = 3.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS D

isc N-Channel MOSFET Transistor 2SK260DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc N-Channel MOSFET Transistor 2SK2608FEATURESStatic drain-source on-resistance:RDS(on) 3.78(TYP)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2601FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER