2SK3424 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3424

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO220AB

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2SK3424 datasheet

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2sk3424 2sk3424-zj 2sk3424-zk.pdf pdf_icon

2SK3424

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3424 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3424 is N-Channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3424 TO-220AB designed for low voltage high current applications such as 2SK3424-ZK TO-263(MP-25ZK) DC/DC con

 ..2. Size:194K  renesas
2sk3424.pdf pdf_icon

2SK3424

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..3. Size:289K  inchange semiconductor
2sk3424.pdf pdf_icon

2SK3424

isc N-Channel MOSFET Transistor 2SK3424 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 0.1. Size:1453K  kexin
2sk3424-zj.pdf pdf_icon

2SK3424

SMD Type MOSFET N-Channel MOSFET 2SK3424-ZJ Features VDS S = 30V ID = 48 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) RDS(ON) 17m (VGS = 4.5V) Low gate charge Drain Body Diode Gate Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20

Otros transistores... 2SK258H, 2SK259, 2SK260, 2SK260H, 2SK3402, 2SK3402-ZK, 2SK3404, 2SK3405, AON7410, 2SK3431, 2SK3431-S, 2SK3431-Z, 2SK3431-ZJ, 2SK3432, 2SK3432-S, 2SK3432-Z, 2SK3432-ZJ