2SK643 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK643
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de 2SK643 MOSFET
2SK643 Datasheet (PDF)
2sk643.pdf

isc N-Channel MOSFET Transistor 2SK643DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
2sk641.pdf

isc N-Channel MOSFET Transistor 2SK641DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Otros transistores... 2SK3432 , 2SK3432-S , 2SK3432-Z , 2SK3432-ZJ , 2SK3433 , 2SK3433-S , 2SK3433-Z , 2SK3433-ZJ , IRFP450 , 2SK644 , 2SK646 , 2SK672 , 2SK673 , 2SK674 , 2SK678 , 2SK682 , 2SK683 .
History: SML100S11 | OSG60R200JSZF | IRFB3207PBF | HY3007PS | AP0904GH | SI3481DV | SDF120NA20HI
History: SML100S11 | OSG60R200JSZF | IRFB3207PBF | HY3007PS | AP0904GH | SI3481DV | SDF120NA20HI



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