2SK643 Datasheet and Replacement
Type Designator: 2SK643
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3PN
2SK643 substitution
2SK643 Datasheet (PDF)
2sk643.pdf

isc N-Channel MOSFET Transistor 2SK643DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies
2sk641.pdf

isc N-Channel MOSFET Transistor 2SK641DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Datasheet: 2SK3432 , 2SK3432-S , 2SK3432-Z , 2SK3432-ZJ , 2SK3433 , 2SK3433-S , 2SK3433-Z , 2SK3433-ZJ , P60NF06 , 2SK644 , 2SK646 , 2SK672 , 2SK673 , 2SK674 , 2SK678 , 2SK682 , 2SK683 .
Keywords - 2SK643 MOSFET datasheet
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History: FDMA0104 | FQT1N60C



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