2SK2641-01 Todos los transistores

 

2SK2641-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2641-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 35 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 70 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.9 Ohm

Empaquetado / Estuche: TO3P

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2SK2641-01 Datasheet (PDF)

1.1. 2sk2641-01.pdf Size:75K _update

2SK2641-01
2SK2641-01

FUJI POWER MOSFET 2SK2641-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=

4.1. 2sk2649-01r.pdf Size:270K _update

2SK2641-01
2SK2641-01

N-channel MOS-FET 2SK2649-01R FAP-IIS Series 800V 1,5Ω 9A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteris

4.2. 2sk2646-01.pdf Size:32K _update

2SK2641-01

FUJI POWER MOSFET 2SK2646-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (

 4.3. 2sk2643-01.pdf Size:71K _update

2SK2641-01
2SK2641-01

FUJI POWER MOSFET 2SK2643-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=

4.4. 2sk2647.pdf Size:73K _fuji

2SK2641-01
2SK2641-01

FUJI POWER MOSFET 2SK2647-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc

 4.5. 2sk2648.pdf Size:72K _fuji

2SK2641-01
2SK2641-01

FUJI POWER MOSFET 2SK2648-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25

4.6. 2sk2640-01mr.pdf Size:296K _fuji

2SK2641-01
2SK2641-01

N-channel MOS-FET 2SK2640-01MR FAP-IIS Series 500V 0,9Ω 10A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristi

4.7. 2sk2642-01mr.pdf Size:90K _fuji

2SK2641-01
2SK2641-01

2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications 3. Source Switching regulators UPS DC-DC converters Equivalent circuit schematic General purpose power amplifier Drain(D) Maximum ratings and char

4.8. 2sk2645 01mr.pdf Size:312K _fuji

2SK2641-01
2SK2641-01

N-channel MOS-FET 2SK2645-01MR FAP-IIS Series 600V 1,2? 9A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics >

4.9. 2sk2645.pdf Size:224K _inchange_semiconductor

2SK2641-01
2SK2641-01

isc N-Channel MOSFET Transistor 2SK2645 ·FEATURES ·Drain Current I = 9A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·High speed Switching ·Repetitive Avalanche rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converter,Switching Regulators,General Purpose Power Amplifier ·ABSOLUTE MAXIMUM RATINGS(T

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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