IRF9633 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9633
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 100 max nS
Cossⓘ - Capacitancia de salida: 300 max pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IRF9633 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF9633 datasheet
8.1. Size:1045K international rectifier
irf9630spbf.pdf 
PD- 95771 IRF9630SPbF Lead-Free 06/06/05 Document Number 91085 www.vishay.com 1 IRF9630SPbF Document Number 91085 www.vishay.com 2 IRF9630SPbF Document Number 91085 www.vishay.com 3 IRF9630SPbF Document Number 91085 www.vishay.com 4 IRF9630SPbF Document Number 91085 www.vishay.com 5 IRF9630SPbF Document Number 91085 www.vishay.com 6 IRF9630SPbF Peak Diode R
8.3. Size:2142K international rectifier
irf9630pbf.pdf
PD - 94958 IRF9630PbF Lead-Free 01/29/04 Document Number 91084 www.vishay.com 1 IRF9630PbF Document Number 91084 www.vishay.com 2 IRF9630PbF Document Number 91084 www.vishay.com 3 IRF9630PbF Document Number 91084 www.vishay.com 4 IRF9630PbF Document Number 91084 www.vishay.com 5 IRF9630PbF Document Number 91084 www.vishay.com 6 IRF9630PbF TO-220AB Package O
8.5. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a
8.7. Size:197K vishay
irf9630pbf sihf9630.pdf
IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.80 RoHS* P-Channel Qg (Max.) (nC) 29 COMPLIANT Fast Switching Qgs (nC) 5.4 Ease of Paralleling Qgd (nC) 15 Simple Drive Requirements Configuration Single Compliant to RoH
8.8. Size:197K vishay
irf9630 sihf9630.pdf
IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.80 RoHS* P-Channel Qg (Max.) (nC) 29 COMPLIANT Fast Switching Qgs (nC) 5.4 Ease of Paralleling Qgd (nC) 15 Simple Drive Requirements Configuration Single Compliant to RoH
8.9. Size:172K vishay
irf9630spbf sihf9630s.pdf
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt Rating Qgs (nC) 5.4 Repetitive Avalanche Rated P-Channel Qgd (nC) 15 Fast Switching Configuration Single
8.10. Size:171K vishay
irf9630s sihf9630s.pdf
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt Rating Qgs (nC) 5.4 Repetitive Avalanche Rated P-Channel Qgd (nC) 15 Fast Switching Configuration Single
Otros transistores... IRF9620S
, IRF9621
, IRF9622
, IRF9623
, IRF9630
, IRF9630S
, IRF9631
, IRF9632
, IRF9540
, IRF9640
, IRF9640S
, IRF9641
, IRF9642
, IRF9643
, IRF9952
, IRF9953
, IRF9Z10
.
