Аналоги IRF9633. Основные параметры
Наименование производителя: IRF9633
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 75
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 5.5
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 100(max)
ns
Cossⓘ - Выходная емкость: 300(max)
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2
Ohm
Тип корпуса:
TO220
Аналог (замена) для IRF9633
-
подбор ⓘ MOSFET транзистора по параметрам
IRF9633 даташит
8.1. Size:1045K international rectifier
irf9630spbf.pdf 
PD- 95771 IRF9630SPbF Lead-Free 06/06/05 Document Number 91085 www.vishay.com 1 IRF9630SPbF Document Number 91085 www.vishay.com 2 IRF9630SPbF Document Number 91085 www.vishay.com 3 IRF9630SPbF Document Number 91085 www.vishay.com 4 IRF9630SPbF Document Number 91085 www.vishay.com 5 IRF9630SPbF Document Number 91085 www.vishay.com 6 IRF9630SPbF Peak Diode R
8.3. Size:2142K international rectifier
irf9630pbf.pdf 
PD - 94958 IRF9630PbF Lead-Free 01/29/04 Document Number 91084 www.vishay.com 1 IRF9630PbF Document Number 91084 www.vishay.com 2 IRF9630PbF Document Number 91084 www.vishay.com 3 IRF9630PbF Document Number 91084 www.vishay.com 4 IRF9630PbF Document Number 91084 www.vishay.com 5 IRF9630PbF Document Number 91084 www.vishay.com 6 IRF9630PbF TO-220AB Package O
8.5. Size:103K fairchild semi
irf9630 rf1s9630sm.pdf 
IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a
8.7. Size:197K vishay
irf9630pbf sihf9630.pdf 
IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.80 RoHS* P-Channel Qg (Max.) (nC) 29 COMPLIANT Fast Switching Qgs (nC) 5.4 Ease of Paralleling Qgd (nC) 15 Simple Drive Requirements Configuration Single Compliant to RoH
8.8. Size:197K vishay
irf9630 sihf9630.pdf 
IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.80 RoHS* P-Channel Qg (Max.) (nC) 29 COMPLIANT Fast Switching Qgs (nC) 5.4 Ease of Paralleling Qgd (nC) 15 Simple Drive Requirements Configuration Single Compliant to RoH
8.9. Size:172K vishay
irf9630spbf sihf9630s.pdf 
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt Rating Qgs (nC) 5.4 Repetitive Avalanche Rated P-Channel Qgd (nC) 15 Fast Switching Configuration Single
8.10. Size:171K vishay
irf9630s sihf9630s.pdf 
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 Surface Mount RDS(on) ( )VGS = - 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 29 Dynamic dV/dt Rating Qgs (nC) 5.4 Repetitive Avalanche Rated P-Channel Qgd (nC) 15 Fast Switching Configuration Single
Другие MOSFET... IRF9620S
, IRF9621
, IRF9622
, IRF9623
, IRF9630
, IRF9630S
, IRF9631
, IRF9632
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, IRF9640
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, IRF9641
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.
