2SK2649-01R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2649-01R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO3PF
Búsqueda de reemplazo de 2SK2649-01R MOSFET
2SK2649-01R Datasheet (PDF)
2sk2649-01r.pdf

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2sk2640-01mr.pdf

N-channel MOS-FET2SK2640-01MRFAP-IIS Series 500V 0,9 10A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteri
Otros transistores... 2SK1503 , 2SK1503-01 , 2SK1511 , 2SK1512-01 , 2SK2639-01 , 2SK2641-01 , 2SK2643-01 , 2SK2646-01 , IRFZ48N , 2SK2652-01 , 2SK2653-01R , 2SK2687-01 , 2SK2688-01L , 2SK2688-01S , 2SK3434 , 2SK3434-S , 2SK3434-Z .
History: SSF2449 | MMFTN3019E | RW1C015UN | IPB65R600C6 | RXH100N03 | BLP065N10GL-P | AIMW120R045M1
History: SSF2449 | MMFTN3019E | RW1C015UN | IPB65R600C6 | RXH100N03 | BLP065N10GL-P | AIMW120R045M1



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