2SK2649-01R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2649-01R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO3PF
Búsqueda de reemplazo de 2SK2649-01R MOSFET
2SK2649-01R Datasheet (PDF)
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Otros transistores... 2SK1503 , 2SK1503-01 , 2SK1511 , 2SK1512-01 , 2SK2639-01 , 2SK2641-01 , 2SK2643-01 , 2SK2646-01 , STP65NF06 , 2SK2652-01 , 2SK2653-01R , 2SK2687-01 , 2SK2688-01L , 2SK2688-01S , 2SK3434 , 2SK3434-S , 2SK3434-Z .
History: BLF6G38-25 | AP60WN4K5H | AP60WN4K9I
History: BLF6G38-25 | AP60WN4K5H | AP60WN4K9I
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM610MN | AGM610M | AGM60P90D | AGM60P90A | AGM60P85E | AGM60P85D | AGM60P85AP | AGM60P40D | AGM60P40A | AGM60P35F | AGM60P30D | AGM60P30C | AGM60P30AP | AGM60P30A | AGM406MNQ | AGM406MNA
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