2SK2649-01R
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2649-01R
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 120
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
TO3PF
2SK2649-01R
Datasheet (PDF)
..1. Size:270K fuji
2sk2649-01r.pdf
N-channel MOS-FET2SK2649-01RFAP-IIS Series 800V 1,5 9A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris
8.1. Size:32K fuji
2sk2646-01.pdf
FUJI POWER MOSFET2SK2646-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(
8.2. Size:71K fuji
2sk2643-01.pdf
FUJI POWER MOSFET2SK2643-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=
8.3. Size:296K fuji
2sk2640-01mr.pdf
N-channel MOS-FET2SK2640-01MRFAP-IIS Series 500V 0,9 10A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteri
8.4. Size:73K fuji
2sk2647.pdf
FUJI POWER MOSFET2SK2647-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic
8.5. Size:75K fuji
2sk2641-01.pdf
FUJI POWER MOSFET2SK2641-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=
8.6. Size:90K fuji
2sk2642-01mr.pdf
2SK2642-01MR FUJI POWER MOS-FETN-CHANNEL SILICON POWER MOS-FETTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=35V GuaranteeAvalanche-proof2.54Applications3. SourceSwitching regulatorsUPS DC-DC convertersEquivalent circuit schematicGeneral purpose power amplifierDrain(D)Maximum ratings and char
8.7. Size:312K fuji
2sk2645 01mr.pdf
N-channel MOS-FET2SK2645-01MRFAP-IIS Series 600V 1,2 9A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris
8.8. Size:72K fuji
2sk2648.pdf
FUJI POWER MOSFET2SK2648-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=
8.9. Size:224K inchange semiconductor
2sk2645.pdf
isc N-Channel MOSFET Transistor 2SK2645FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSHigh speed SwitchingRepetitive Avalanche ratedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,Switching Regulators,General PurposePower AmplifierABSOLUTE MAXIMUM RATINGS(T
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, 2SK1511
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, 2SK2643-01
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, 2SK2653-01R
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