2SK2652-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2652-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO3P

Búsqueda de reemplazo de MOSFET 2SK2652-01

2SK2652-01 Datasheet (PDF)

..1. Size:312K fuji
2sk2652-01.pdf

N-channel MOS-FET2SK2652-01FAP-IIS Series 900V 2,5 6A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

7.1. Size:251K inchange semiconductor
2sk2652.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2652FEATURESDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies andgeneral purpose applications.

8.1. Size:30K panasonic
2sk2659.pdf

Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit : mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo

8.2. Size:304K fuji
2sk2653-01r.pdf

N-channel MOS-FET2SK2653-01RFAP-IIS Series 900V 2,5 6A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

8.3. Size:327K fuji
2sk2651-01mr.pdf

N-channel MOS-FET2SK2651-01MRFAP-IIS Series 900V 2,5 6A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris

8.4. Size:267K fuji
2sk2654-01.pdf

N-channel MOS-FET2SK2654-01FAP-IIS Series 900V 2 8A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristic

8.5. Size:291K fuji
2sk2655-01r.pdf

N-channel MOS-FET2SK2655-01RFAP-IIS Series 900V 2 8A 100W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

8.6. Size:257K inchange semiconductor
2sk2654.pdf

isc N-Channel MOSFET Transistor 2SK2654FEATURESDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =

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