2SK2652-01 Todos los transistores

 

2SK2652-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2652-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO3P
 

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2SK2652-01 Datasheet (PDF)

 ..1. Size:312K  fuji
 2sk2652-01.pdf pdf_icon

2SK2652-01

N-channel MOS-FET2SK2652-01FAP-IIS Series 900V 2,5 6A 125W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

 7.1. Size:251K  inchange semiconductor
 2sk2652.pdf pdf_icon

2SK2652-01

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2652FEATURESDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies andgeneral purpose applications.

 8.1. Size:30K  panasonic
 2sk2659.pdf pdf_icon

2SK2652-01

Power F-MOS FETs 2SK26592SK2659Silicon N-Channel Power F-MOSUnit : mm5.0 0.1 Features10.0 0.2 1.0 Avalanche energy capability guaranteed High-speed switching90 Low ON-resistance No secondary breakdown 1.2 0.1 C1.02.25 0.2 Low-voltage drive0.65 0.10.35 0.1 1.05 0.1 Radial taping possible0.55 0.10.55 0.1 ApplicationsNon-contact relayNo

 8.2. Size:304K  fuji
 2sk2653-01r.pdf pdf_icon

2SK2652-01

N-channel MOS-FET2SK2653-01RFAP-IIS Series 900V 2,5 6A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characterist

MOSTRAR MÁS

Otros transistores... 2SK1503-01 , 2SK1511 , 2SK1512-01 , 2SK2639-01 , 2SK2641-01 , 2SK2643-01 , 2SK2646-01 , 2SK2649-01R , NCEP15T14 , 2SK2653-01R , 2SK2687-01 , 2SK2688-01L , 2SK2688-01S , 2SK3434 , 2SK3434-S , 2SK3434-Z , 2SK3435-ZJ .

History: SPB16N50C3 | 2P7154VC

 

 
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