2SK777 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK777 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO3P
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2SK777 datasheet
2sk777.pdf
isc N-Channel MOSFET Transistor 2SK777 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve
2sk775.pdf
"2SK775" "2SK775" "2SK775" "2SK775" "2SK775" "2SK775" "2SK775" "2SK775"
2sk772.pdf
Ordering number EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions Variable resistors, analog switches, AF amplifier, unit mm constant-current circuit. 2034A [2SK772] 2.2 4.0 Features Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 3.8nom SANYO SPA Specifications Ab
2sk771.pdf
Ordering number EN2391 N-Channel Junction Silicon FET 2SK771 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Variable resistors, analog switches, AF amplifier, unit mm constant-current circuit. 2050A [2SK771] Features 0.4 0.16 Adoption of FBET process. 3 Ultrasmall-sized package permitting sets to be made 0 to 0.1 smaller and sl
Otros transistores... 2SK3456-S, 2SK3456-ZJ, 2SK3457, 2SK3458, 2SK3458-S, 2SK3458-ZK, 2SK775, 2SK776, IRFZ44N, 2SK783, 2SK784, 2SK785, 2SK786, 2SK788, 2SK789, 2SK790, 2SK1377
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