2SK777 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK777

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 450 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 90 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.65 Ohm

Empaquetado / Estuche: TO3P

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2SK777 Datasheet (PDF)

1.1. 2sk777.pdf Size:39K _update

1.2. 2sk777.pdf Size:238K _update-mosfet

isc N-Channel MOSFET Transistor 2SK777 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.1. 2sk774.pdf Size:154K _update

5.2. 2sk773.pdf Size:145K _update

5.3. 2sk776.pdf Size:38K _update

5.4. 2sk775.pdf Size:671K _update

查询"2SK775"供应商查询"2SK775"供应商查询"2SK775"供应商查询"2SK775"供应商查询"2SK775"供应商查询"2SK775"供应商查询"2SK775"供应商查询"2SK775"供应商

5.5. 2sk770.pdf Size:62K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK770 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RAT

5.6. 2sk770.pdf Size:234K _update-mosfet

isc N-Channel MOSFET Transistor 2SK770 DESCRIPTION ·Drain Current –I =2A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conver

5.7. 2sk771.pdf Size:79K _sanyo

Ordering number:EN2391 N-Channel Junction Silicon FET 2SK771 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions � Variable resistors, analog switches, AF amplifier, unit:mm constant-current circuit. 2050A [2SK771] Features 0.4 0.16 � Adoption of FBET process. 3 � Ultrasmall-sized package permitting sets to be made 0 to 0.1 smaller and slimmer.

5.8. 2sk772.pdf Size:77K _sanyo

Ordering number:EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions � Variable resistors, analog switches, AF amplifier, unit:mm constant-current circuit. 2034A [2SK772] 2.2 4.0 Features � Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 : Source 1.3 1.3 2 : Gate 3 : Drain 3.0 3.8nom SANYO : SPA Specifications Absolut

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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