2SK777 Datasheet. Specs and Replacement
Type Designator: 2SK777 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO3P
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2SK777 substitution
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2SK777 datasheet
2sk777.pdf
isc N-Channel MOSFET Transistor 2SK777 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒
2sk775.pdf
"2SK775" "2SK775" "2SK775" "2SK775" "2SK775" "2SK775" "2SK775" "2SK775" ... See More ⇒
2sk772.pdf
Ordering number EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions Variable resistors, analog switches, AF amplifier, unit mm constant-current circuit. 2034A [2SK772] 2.2 4.0 Features Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 3.8nom SANYO SPA Specifications Ab... See More ⇒
2sk771.pdf
Ordering number EN2391 N-Channel Junction Silicon FET 2SK771 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Variable resistors, analog switches, AF amplifier, unit mm constant-current circuit. 2050A [2SK771] Features 0.4 0.16 Adoption of FBET process. 3 Ultrasmall-sized package permitting sets to be made 0 to 0.1 smaller and sl... See More ⇒
Detailed specifications: 2SK3456-S, 2SK3456-ZJ, 2SK3457, 2SK3458, 2SK3458-S, 2SK3458-ZK, 2SK775, 2SK776, IRF3205, 2SK783, 2SK784, 2SK785, 2SK786, 2SK788, 2SK789, 2SK790, 2SK1377
Keywords - 2SK777 MOSFET specs
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