2SK786 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK786

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 7 Ohm

Empaquetado / Estuche: TO220

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2SK786 Datasheet (PDF)

1.1. 2sk786.pdf Size:182K _update

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5.1. 2sk785.pdf Size:158K _update

5.2. 2sk783.pdf Size:203K _update

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK783 FEATURES ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed DESCRIPTION ·Designed especially for high voltage,high speed applications, such as switching power supplies . ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

5.3. 2sk789.pdf Size:67K _update

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5.4. 2sk784.pdf Size:156K _update

5.5. 2sk788.pdf Size:370K _update

5.6. 2sk787.pdf Size:237K _update-mosfet

isc N-Channel MOSFET Transistor 2SK787 DESCRIPTION ·Drain Current –I =8A@ T =25℃ D C ·Drain Source Voltage- : V = 900V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching power supplies，actuater control,and pulse circuits. ABSOLUTE MAXIMUM RATINGS(

5.7. 2sk783.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor 2SK783 FEATURES ·Drain Current –I =12A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed 100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed especially for high voltage,high speed applications, such as switching power supplies . ABSOLUTE M

5.8. 2sk789.pdf Size:237K _update-mosfet

isc N-Channel MOSFET Transistor 2SK789 DESCRIPTION ·Drain Current –I =15A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.9. 2sk788.pdf Size:238K _update-mosfet

isc N-Channel MOSFET Transistor 2SK788 DESCRIPTION ·Drain Current –I =13A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.10. 2sk787.pdf Size:173K _nec

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