Справочник MOSFET. 2SK786

 

2SK786 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK786
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
   Тип корпуса: TO220

 Аналог (замена) для 2SK786

 

 

2SK786 Datasheet (PDF)

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 2sk786.pdf

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 9.1. Size:173K  nec
 2sk787.pdf

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 9.2. Size:158K  nec
 2sk785.pdf

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 9.3. Size:156K  nec
 2sk784.pdf

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 9.4. Size:238K  inchange semiconductor
 2sk788.pdf

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isc N-Channel MOSFET Transistor 2SK788DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

 9.5. Size:237K  inchange semiconductor
 2sk787.pdf

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isc N-Channel MOSFET Transistor 2SK787DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching power suppliesactuatercontrol,and pulse circuits.ABSOLUTE MAXIMUM RATINGS(

 9.6. Size:236K  inchange semiconductor
 2sk783.pdf

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isc N-Channel MOSFET Transistor 2SK783FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as switching power supplies .ABSOLUTE M

 9.7. Size:237K  inchange semiconductor
 2sk789.pdf

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isc N-Channel MOSFET Transistor 2SK789DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, conve

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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