2SK1377 Todos los transistores

 ..1. Size:56K  inchange semiconductor
 2sk1377.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1377 DESCRIPTION Drain Current ID=5.5A@ TC=25 Drain Source Voltage- VDSS=400V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V

 8.1. Size:150K  sanyo
 2sk1375.pdf

 8.2. Size:33K  panasonic
 2sk1374.pdf

Silicon MOS FETs (Small Signal) 2SK1374 2SK1374 Silicon N-Channel MOS Unit mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter Symbol Rating Unit Drain-Source voltage V 50 V DS 1 Gate Gate-Source voltage

 8.3. Size:41K  no
 2sk1378.pdf

 8.4. Size:75K  no
 2sk1379.pdf

Free Datasheet http //www.datasheet-pdf.com/ Free Datasheet http //www.datasheet-pdf.com/

 8.5. Size:200K  inchange semiconductor
 2sk1378.pdf

isc N-Channel MOSFET Transistor 2SK1378 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai

 8.6. Size:202K  inchange semiconductor
 2sk1373.pdf

isc N-Channel MOSFET Transistor 2SK1373 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V =550V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)