2SK1377 Todos los transistores

 

2SK1377 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1377
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 25 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220F

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2SK1377 Datasheet (PDF)

 ..1. Size:56K  inchange semiconductor
2sk1377.pdf

2SK1377 2SK1377

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1377 DESCRIPTION Drain Current ID=5.5A@ TC=25 Drain Source Voltage- : VDSS=400V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V

 8.1. Size:150K  sanyo
2sk1375.pdf

2SK1377 2SK1377

 8.2. Size:33K  panasonic
2sk1374.pdf

2SK1377 2SK1377

Silicon MOS FETs (Small Signal) 2SK13742SK1374Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage V 50 VDS1 : GateGate-Source voltage

 8.3. Size:41K  no
2sk1378.pdf

2SK1377

 8.4. Size:75K  no
2sk1379.pdf

2SK1377 2SK1377

Free Datasheet http://www.datasheet-pdf.com/Free Datasheet http://www.datasheet-pdf.com/

 8.5. Size:200K  inchange semiconductor
2sk1378.pdf

2SK1377 2SK1377

isc N-Channel MOSFET Transistor 2SK1378DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

 8.6. Size:202K  inchange semiconductor
2sk1373.pdf

2SK1377 2SK1377

isc N-Channel MOSFET Transistor 2SK1373DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =550V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

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