2SK2729 Todos los transistores

 

2SK2729 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2729

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 500 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 140 nS

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.29 Ohm

Empaquetado / Estuche: TO3P

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2SK2729 Datasheet (PDF)

0.1. 2sk2729.pdf Size:209K _renesas

2SK2729
2SK2729

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. 2sk2723.pdf Size:83K _1

2SK2729
2SK2729

DATA SHEETMOS Field Effect Power Transistors2SK2723SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEPACKAGE DIMENSIONS(in millimeter)DESCRIPTION4.5 0.2This product is N-Channel MOS Field Effect Transistor 10.0 0.33.2 0.2designed for high current switching spplications.2.7 0.2FEATURES Low On-ResistanceRDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A)R

8.2. 2sk2724.pdf Size:83K _1

2SK2729
2SK2729

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONS (in millimeter)This product is N-Channel MOS Field Effect Transistor4.5 0.2designed for high current switching applications.10.0 0.33.2 0.22.7 0.2FEATURES Low On-ResistanceRDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A)RDS(on)

 8.3. 2sk2726.pdf Size:209K _renesas

2SK2729
2SK2729

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. 2sk2727.pdf Size:209K _renesas

2SK2729
2SK2729

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. 2sk2725.pdf Size:209K _renesas

2SK2729
2SK2729

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. 2sk2728.pdf Size:52K _hitachi

2SK2729
2SK2729

2SK2728Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-454 B3rd. EditionFeatures Low on-resistance High speed switching Low drive current Avalanche ratingsOutlineTO3PDG1. Gate2. Drain12 (Flange) 33. SourceS2SK2728Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to sour

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