2SK2729 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK2729
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 55 nC
trⓘ - Время нарастания: 140 ns
Cossⓘ - Выходная емкость: 900 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: TO3P
2SK2729 Datasheet (PDF)
2sk2729.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2723.pdf

DATA SHEETMOS Field Effect Power Transistors2SK2723SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEPACKAGE DIMENSIONS(in millimeter)DESCRIPTION4.5 0.2This product is N-Channel MOS Field Effect Transistor 10.0 0.33.2 0.2designed for high current switching spplications.2.7 0.2FEATURES Low On-ResistanceRDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A)R
2sk2724.pdf

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONS (in millimeter)This product is N-Channel MOS Field Effect Transistor4.5 0.2designed for high current switching applications.10.0 0.33.2 0.22.7 0.2FEATURES Low On-ResistanceRDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A)RDS(on)
2sk2726.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FQA6N90C-F109 | IRF6609 | IRL1004SPBF | SI3454ADV
History: FQA6N90C-F109 | IRF6609 | IRL1004SPBF | SI3454ADV



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