2SK3774-01L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3774-01L Datasheet (PDF)

..1. Size:283K inchange semiconductor
2sk3774-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3774-01LFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

0.1. Size:146K fuji
2sk3774-01l-s-sj.pdf pdf_icon

2SK3774-01L,S,SJN-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406FUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistanceSee to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratings(T

4.1. Size:357K inchange semiconductor
2sk3774-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3774-01SFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

4.2. Size:357K inchange semiconductor
2sk3774-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3774-01SJFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Otros transistores... 2SK3889-01L , 2SK3889-01S , 2SK3889-01SJ , 2SK3891-01R , 2SK3899-ZK , 2SK3900-ZP , 2SK3901-ZK , 2SK3902-ZK , 4435 , 2SK3774-01S , 2SK3774-01SJ , 2SK903MR , 2SK930 , 2SK943 , 2SK944 , 2SK945 , 2SK949M .