IRF9953 Todos los transistores

 

IRF9953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF9953

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 6.1 nC

Conductancia de drenaje-sustrato (Cd): 190 pF

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: SO8

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IRF9953 Datasheet (PDF)

1.1. irf9953.pdf Size:107K _international_rectifier

IRF9953
IRF9953

PD - 9.1560A IRF9953 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.25? Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade: IRF7

4.1. irf9952qpbf.pdf Size:280K _upd-mosfet

IRF9953
IRF9953

PD - 96115 IRF9952QPbF HEXFET® Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET l Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 l Available in Tape & Reel S2 D2 l 150°C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualified P-CHANNEL MOSFET RDS(on) 0.10Ω 0.25Ω l Lead-Free Top V

4.2. irf9952.pdf Size:134K _international_rectifier

IRF9953
IRF9953

PD - 9.1561A IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel MOSFET G1 D1 Surface Mount VDSS 30V -30V 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses P -CH AN N EL M OSFET RDS(on) 0.10? 0.25? Fully Avalanche Rated T op V iew Recommended upgrade: IRF7309

 4.3. irf9956.pdf Size:107K _international_rectifier

IRF9953
IRF9953

PD - 9.1559A IRF9956 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Very Low Gate Charge and 4 5 G2 D2 Switching Losses RDS(on) = 0.10? Fully Avalanche Rated T op V iew Description Fifth Generation HEXFETs from International Rectifier Recommended upgrade: IRF

Otros transistores... IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 , 2N4416 , IRF9Z10 , IRF9Z12 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 .

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